Researchers develop picosecond-level flash memory device
(fudan.edu.cn)
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds, equivalent to operating 25 billion times per second, shattering the existing speed limits in information storage.
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds, equivalent to operating 25 billion times per second, shattering the existing speed limits in information storage.