Hacker News with Generative AI: Spintronics

Harnessing orbital Hall effect in spin-orbit torque MRAM (nature.com)
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications.
Circularly Polarized Light Unlocks Ultrafast Magnetic Storage and Spintronics (scitechdaily.com)